No. 6 (2002): Tekhnologiya i konstruirovanie v elektronnoi apparature

Articles

• Integrated approach to obtaining high-purity materials for microelectronics

  V. M. Azhazha, G. P. Kovtun, I. M. Nekljudov

  3-6

  • PDF (Українська)
• Influence of fast neutron irradiation on epitaxial gallium arsenide

  V. A. Zavadsky, S. V. Lenkov, D. V. Lukomsky, V. A. Mokritsky

  7-9

  • PDF (Українська)
• Mathematical modeling of degradation of ceramic thermistors with negative TCR

  V. A. Balitskaya, N. M. Vakiv, O. I. Shpotyuk

  10-13

  • PDF (Українська)
• Methodology for determining the dynamic range of semiconductor photodetectors

  I. V. Doktorovich, V. K. Butenko, V. N. Godovaniuk, V. G. Yurjev

  14-15

  • PDF (Українська)
• Spectral photosensitivity of Ni–Si:Au surface-barrier structures with injection amplification

  Sh. D. Kurmashev, I. M. Vikulin, S. V. Lenkov, R. G. Sidorets

  16-19

  • PDF (Українська)
• Anisotropic thermoelectric comparator

  A. A. Ashcheulov, I. V. Hutsul

  20-21

  • PDF (Українська)
• Cooling of promising hard disk drives using heat pipes

  Yu. Ye. Nikolaienko, V. Yu. Kravets, V. A. Striuchenко, A. S. Belokonеnko

  22-25

  • PDF (Українська)
• Technological aspect of increasing the efficiency of semiconductor photovoltaic converters

  V. V. Kurak, V. V. Tsybulenko, V. L. Agbomassou

  26-29

  • PDF (Українська)
• Complex doping of GaAs and InGaAs layers during liquid phase epitaxy

  S. I. Krukovskyi

  30-32

  • PDF (Українська)
• Conditions for obtaining hollow silicon prisms for photovoltaic converters

  B. P. Masenko

  33-37

  • PDF (Українська)
• Use of low-dimensional heterostructures of AIII-BV compounds in pressure sensors

  I. Ye. Maronchuk, A. D. Kucheruk, S. Yu. Yerokhin, I. V. Chornyi

  38-43

  • PDF (Українська)
• Electrothermal element of gas sensors

  Ya. I. Lepykh

  43-44

  • PDF (Українська)
• Modernization of the "Onyx" photonic annealing system for semiconductor wafers

  H. V. Savytskyi, A. Yu. Bonchyk, I. I. Izhnin, S. H. Kyyak, I. A. Mohyliak, I. P. Trostinskyi

  45-47

  • PDF (Українська)
• Design and technological constraints in the design of high-voltage CMOS LSI circuits

  V. H. Verbytskyi, V. I. Zolotarevskyi, Yu. Ye. Nikolaienko, L. I. Samotovka, E. S. Tovmach

  48-53

  • PDF (Українська)
• Contact-forming films of titanium borides and nitrides in gallium arsenide microwave devices

  V. N. Ivanov, R. V. Konakova, V. V. Milenin, M. A. Stovpovoi

  54-56

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• Plasma technology for the formation of submicron LSI structures

  S. P. Novosiadlyi

  57-63

  • PDF (Українська)
• Power microcircuit for control units of gas-discharge light sources

  H. I. Havryliuk, V. V. Sevastianov, L. M. Bondarchuk, V. V. Chechel

  63-64

  • PDF (Українська)