Integrated approach to obtaining high-purity materials for microelectronics

Abstract

The paper presents the results of numerical simulation of the electrophysical properties of GaAs depending on the content of residual impurities, and describes physical refining methods for obtaining high-purity Ga, Zn, Cd, Te, Nb, Ta, Zr, and other metals. The results of research on the stability of coated quartz crucibles in GaAs and Ga melts, as well as the results of the development of getter materials based on Zr alloys for process gas purification, are provided. The importance of an integrated approach to the problem of high-purity raw materials is demonstrated.