Complex doping of GaAs and InGaAs layers during liquid phase epitaxy
Keywords:
liquid phase epitaxy, epitaxial layers, co-doping, rare-earth elements, electrophysical parameters
Abstract
The effect of rare-earth and isovalent elements (Yb and Al) on the electrophysical parameters of GaAs and InGaAs epitaxial layers grown by the LPE method from Ga and In melt solutions is investigated. It is shown that co-doping with ytterbium from 0 to 0.044 at.% and aluminum with 0.015 and 0.026 at.% allows obtaining GaAs and InGaAs epitaxial layers with a mobility of 50,000 and 116,000 cm²/V·s, respectively. Possible mechanisms of the effect of Yb and Al on the electrophysical parameters of GaAs and InGaAs epitaxial layers are analyzed.
Published
2002-12-30
How to Cite
Krukovskyi, S. I. (2002). Complex doping of GaAs and InGaAs layers during liquid phase epitaxy. Technology and Design in Electronic Equipment, (6), 30-32. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2002.6.30
Section
Articles
Copyright (c) 2002 Krukovskyi S. I.
This work is licensed under a Creative Commons Attribution 4.0 International License.
