Spectral photosensitivity of Ni–Si:Au surface-barrier structures with injection amplification

  • Sh. D. Kurmashev I. I. Mechnikov Odesa National University, Ukraine
  • I. M. Vikulin Odesa National Academy of Telecommunications named after A. S. Popov, Ukraine
  • S. V. Lenkov Odesa National Academy of Telecommunications named after A. S. Popov, Ukraine
  • R. G. Sidorets Odesa National Academy of Telecommunications named after A. S. Popov, Ukraine
Keywords: surface-barrier structures, photosensitivity spectra, gold-compensated silicon, injection amplification, bipolar drift mobility

Abstract

Surface-barrier structures are used as a photodetector with injection amplification. The photosensitivity spectra of diodes based on gold-compensated silicon are investigated. The contribution of various energy levels to the injection amplification is discussed. The highest amplification occurs for wavelengths λ = 1.25...1.75 μm and can reach 10 or more. In this case, the injection amplification is associated with an increase in the bipolar drift mobility of current carriers under illumination.

Published
2002-12-30
How to Cite
Kurmashev, S. D., Vikulin, I. M., Lenkov, S. V., & Sidorets, R. G. (2002). Spectral photosensitivity of Ni–Si:Au surface-barrier structures with injection amplification. Technology and Design in Electronic Equipment, (6), 16-19. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2002.6.16
Issue
No. 6 (2002): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2002 Kurmashev Sh. D., Vikulin I. M., Lenkov S. V., Sidorets R. G.

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This work is licensed under a Creative Commons Attribution 4.0 International License.