Technological aspect of increasing the efficiency of semiconductor photovoltaic converters

  • V. V. Kurak Kherson National Technical University, Ukraine
  • V. V. Tsybulenko Kherson National Technical University, Ukraine
  • V. L. Agbomassou Kherson National Technical University, Ukraine
Keywords: photovoltaic converters, TGZM method, light heating, AlGaAs–GaAs heterostructures, quantum dots

Abstract

A new technology for creating silicon edge-defined photovoltaic converters (PVCs) by the TGZM method, in which the temperature gradient is created by light heating on the "Uran" system, is proposed. The efficiency of PVCs manufactured by this method is about 11% without the use of anti-reflective coatings. The feasibility of studying anti-reflective coatings for planar PVCs based on AlGaAs–GaAs heterostructures is shown. As the main direction for increasing the efficiency of such PVCs, it is proposed to use quantum dots of narrow-gap materials placed in a wide-gap material matrix near the boundary of the p–n junction.
Published
2002-12-30
How to Cite
Kurak, V. V., Tsybulenko, V. V., & Agbomassou, V. L. (2002). Technological aspect of increasing the efficiency of semiconductor photovoltaic converters. Technology and Design in Electronic Equipment, (6), 26-29. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2002.6.26
Issue
No. 6 (2002): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2002 Kurak V. V., Tsybulenko V. V., Agbomassou V. L.

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