Contact-forming films of titanium borides and nitrides in gallium arsenide microwave devices

Abstract

The thermal stability of ohmic and rectifying contact systems AuGe—Ta—Au, AuGe—TaNₓ—Au, AuGe—TiBₓ—Au, AuGe—TiBₓ—Mo—Au, and Ti—Au, TiNₓ—Au, TiBₓ—Au to n-type gallium arsenide epitaxial structures with a thickness of 3–5 μm and a carrier concentration of (5...6)·10¹⁵ cm^–3 is considered. It is shown that contacts with TiNₓ, TaNₓ, and TiBₓ layers slightly change their parameters after heat treatment at 550°C for 1 hour. Contacts with Ti and Ta layers change their characteristics sharply during heat treatment at 550°C.