Plasma technology for the formation of submicron LSI structures

Abstract

High-frequency plasma processes for the deposition and etching of functional layers during the formation of LSI structures with topological dimensions of 0.5–0.8 μm are investigated. The technology ensures minimal induced defect density of functional layers (<0.05 cm⁻²), does not affect the charge state of the Si—SiO₂ interface, and creates favorable conditions for low-temperature (<700°C) homoepitaxy of monosilicon and polysilicon on a Si substrate of any orientation type.