Influence of fast neutron irradiation on epitaxial gallium arsenide

  • V. A. Zavadsky Odessa National Maritime Academy, Odesа, Ukraine
  • S. V. Lenkov National Aviation University, Kyiv, Ukraine
  • D. V. Lukomsky National Aviation University, Kyiv, Ukraine
  • V. A. Mokritsky Odessa National Maritime Academy, Odesа, Ukraine
Keywords: GaAs, epitaxial layers, fast neutron irradiation, carrier mobility

Abstract

The paper demonstrates the possibility of controlling the parameters of gallium arsenide epitaxial layers using radiation treatment with fast neutrons. From a technological perspective, neutron irradiation is proposed to be divided into two types depending on the radiation dose. The first one (radiation doses up to 1·1015 cm–2) can serve as a means of improving the properties of the layers by increasing carrier mobility and operation speed. The second one (radiation doses exceeding 5·1015 cm–2) reduces the concentration and mobility of charge carriers.

Published
2002-12-30
How to Cite
Zavadsky, V. A., Lenkov, S. V., Lukomsky, D. V., & Mokritsky, V. A. (2002). Influence of fast neutron irradiation on epitaxial gallium arsenide. Technology and Design in Electronic Equipment, (6), 7-9. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2002.6.07
Issue
No. 6 (2002): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2002 Zavadsky V. A., Lenkov S. V., Lukomsky D. V., Mokritsky V. A.

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