No. 1–2 (2011): Tekhnologiya i konstruirovanie v elektronnoi apparature

Articles

• Fiber-optic demultiplexers with high mechanical resistance

  S. G. Dementyev, N. T. Klyuchnik, V. A. Kuznetsov, M. Ya. Yakovlev

  3-5

  • PDF (Українська)
• Automated diagnosis of chemical current sources

  V. A. Dzenzerskiy, M. A. Beda, N. E. Zhitnik, V. N. Lesnichiy, S. V. Plaksin, Yu. A. Tkachenko

  6-9

  • PDF (Українська)
• Stability to irradiation of SiGe whisker crystals used for sensors of physical values

  A. A. Druzhinin, I. P. Ostrovskiy, Yu. N. Khoverko, P. G. Litovchenko, N. T. Pavlovska, Yu. V. Pavlovskiy, V. M. Tsmots, V. Yu. Povarchuk

  10-12

  • PDF (Українська)
• Increase in sensitivity of sensor units of environment refraction index change based on superficial plasmon resonance

  Yu. V. Ushenin, А. V. Samoylov, R. V. Khristosenko

  12-14

  • PDF (Українська)
• Temperature dependence of working characteristics of piezoelectric sensors based on polyvinylidene fluoride

  T. A. Revenyuk, S. N. Fedosov

  15-17

  • PDF (Українська)
• Alignment gas analyzer

  G. A. Devyatko, V. A. Kuchmenko, S. A. Latsis, V. A. Orlov, V. O. Partyshev, V. Ya. Podolskiy

  17-21

  • PDF (Українська)
• Plastic deformation in nanostructure silicon formation

  V. A. Smyntyna, O. A. Kulinich, I. R. Yatsunkiy, I. A. Marchuk

  22-24

  • PDF (Українська)
• Some features of a current limiter on the field-effect transistor

  A. V. Karimov, D. R. Djurayev, D. M. Yodgorova, A. Z. Rakhmatov, O. A. Abdulkhayev, B. M. Kamanov, A. A. Turayev

  25-26

  • PDF (Українська)
• Simulation of temperature conditions in the elements of microelectronic devices

  V. I. Gavrysh, A. I. Kosach

  27-30

  • PDF (Українська)
• Mass and overall optimization of radiator design

  G. N. Shilo, E. V. Ogrenich, N. P. Gaponenko

  30-33

  • PDF (Українська)
• Cooling evaporating-condensation type system for X-ray tubes

  A. N. Gershuni, A. Р. Nishchik

  34-38

  • PDF (Українська)
• The operating mode of the two-cascade thermoelectric cooling device providing the minimum failure rate

  D. P. Socheslav

  39-41

  • PDF (Українська)
• RF reactor with asymmetrical electrodes for reactive ion etching of semiconductors

  S. V. Dudin, V. А. Lisovskiy, A. N. Dahov, V. M. Pletniov

  42-48

  • PDF (Українська)
• The equipment for ohmic contacts formation in semi-conductor devices based on А3В5 connections

  S. B. Aleksandrov, K. M Krupal'nik, N. O. Kornilov, T. A. Kondratyeva

  49-52

  • PDF (Українська)
• 3D-nanocomposites — the opal matrices with metal Co inclusions and the layered structures "opal matrices — Co/Ir"

  M. I. Samoylovich, A. B. Rinkevich, A. F. Belyanin, P. V. Paschenko

  53-59

  • PDF (Українська)
• Effective scintillation materials based on solid solutions ZnS1–xTex and perspectives of their application

  K. A. Katrunov, A. I. Lalayantz, L. P. Gal’chinetskiy, N. V. Starzhinskiy, A. V. Zhukov, S. N. Galkin, Ye. Yu. Brilyova, I. M. Zenya, O. G. Trubaeva

  60-64

  • PDF (Українська)