Plastic deformation in nanostructure silicon formation

Abstract

The quantity and quality analysis of plastic deformation and near-surface silicon layers with nanostructure silicon formation are given in this paper. It is shown, due to high-temperature oxidation and other factors the complex defect structure is generated in near-surface silicon layers. It consists of a disordered silicon layer and a layer of dislocation networks. Silicon dioxide etching and additional chemical treatment allows obtaining nanostructured silicon with given properties.