Stability to irradiation of SiGe whisker crystals used for sensors of physical values

  • A. A. Druzhinin Lviv Polytechnic National University, Lviv, Ukraine
  • I. P. Ostrovskiy Lviv Polytechnic National University, Lviv, Ukraine
  • Yu. N. Khoverko Lviv Polytechnic National University, Lviv, Ukraine
  • P. G. Litovchenko Lviv Polytechnic National University, Lviv, Ukraine
  • N. T. Pavlovska Lviv Polytechnic National University, Lviv, Ukraine
  • Yu. V. Pavlovskiy Lviv Polytechnic National University, Lviv, Ukraine
  • V. M. Tsmots Ivan Franko State Pedagogical University of Drogobych, Ukraine
  • V. Yu. Povarchuk Nuclear Research Institute of NASU; Institute of Physics of NASU, Kyiv, Ukraine
Keywords: whisker, silicon-germanium, gage, gamma irradiation

Abstract

An influence of g-irradiation (Co60) with doze up to 1—1018 сm–2 and magnetic field with induction up to 14 T on conduction of 1–xGex (х = 0,03) whisker crystals with resistivity of 0,08—0,025 Оhm·сm in temperature range 4,2—300 K have been studied. It is shown that whisker crystals resistance faintly varies under irradiation with doze 2·1017 сm–2, while their magnetoresistance substantially changes. The strain sensors stable to irradiation action operating in high magnetic fields on the base of the whiskers have been designed.

Published
2011-04-28
How to Cite
Druzhinin, A. A., Ostrovskiy, I. P., Khoverko, Y. N., Litovchenko, P. G., Pavlovska, N. T., Pavlovskiy, Y. V., Tsmots, V. M., & Povarchuk, V. Y. (2011). Stability to irradiation of SiGe whisker crystals used for sensors of physical values. Technology and Design in Electronic Equipment, (1–2), 10-12. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2011.1-2.10
Issue
No. 1–2 (2011): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2011 Druzhinin A. A., Ostrovskiy I. P., Khoverko Yu. N., Litovchenko P. G., Pavlovska N. T., Pavlovskiy Yu. V., Tsmots V. M., Povarchuk V. Yu.

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