Effective scintillation materials based on solid solutions ZnS1–xTex and perspectives of their application

  • K. A. Katrunov Institute for Scintillation Materials of the NAS of Ukraine, Kharkiv, Ukraine
  • A. I. Lalayantz Institute for Scintillation Materials of the NAS of Ukraine, Kharkiv, Ukraine
  • L. P. Gal’chinetskiy Institute for Scintillation Materials of the NAS of Ukraine, Kharkiv, Ukraine
  • N. V. Starzhinskiy Institute for Scintillation Materials of the NAS of Ukraine, Kharkiv, Ukraine
  • A. V. Zhukov Institute for Scintillation Materials of the NAS of Ukraine, Kharkiv, Ukraine
  • S. N. Galkin Institute for Scintillation Materials of the NAS of Ukraine, Kharkiv, Ukraine
  • Ye. Yu. Brilyova Institute for Scintillation Materials of the NAS of Ukraine, Kharkiv, Ukraine
  • I. M. Zenya Institute for Scintillation Materials of the NAS of Ukraine, Kharkiv, Ukraine
  • O. G. Trubaeva Institute for Scintillation Materials of the NAS of Ukraine, Kharkiv, Ukraine
Keywords: equilibrium constant, scintillators, ZnS1-xTex solid solution, roentgenoluminescence, afterglow

Abstract

The optimal technological regime of formation ZnS1–xTex solid solution at spacing 0,0≤х≤0,1 has been determined, and has been shown that fritting in hydrogen atmosphere results in more rapid reaction in comparison to argon due to chemical-thermal etching of the ZnO layer out. Further annealing in the inert Ar atmosphere leads to the increase of the light output, to the intensive emission band formation and causes afterglow level reduction and the crystalline lattice rearrangement.

Published
2011-04-28
How to Cite
Katrunov, K. A., Lalayantz, A. I., Gal’chinetskiy, L. P., Starzhinskiy, N. V., Zhukov, A. V., Galkin, S. N., Brilyova, Y. Y., Zenya, I. M., & Trubaeva, O. G. (2011). Effective scintillation materials based on solid solutions ZnS1–xTex and perspectives of their application. Technology and Design in Electronic Equipment, (1–2), 60-64. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2011.1-2.60
Issue
No. 1–2 (2011): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2011 Katrunov K. A., Lalayantz A. I., Gal’chinetskiy L. P., Starzhinskiy N. V., Zhukov A. V., Galkin S. N., Brilyova Ye., Zenya I. M., Trubaeva O. G.

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