Some features of a current limiter on the field-effect transistor

  • A. V. Karimov Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • D. R. Djurayev Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • D. M. Yodgorova Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • A. Z. Rakhmatov Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • O. A. Abdulkhayev Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • B. M. Kamanov JSC «FOTON», Tashkent, Uzbekistan
  • A. A. Turayev JSC «FOTON», Tashkent, Uzbekistan
Keywords: FET, drain current, saturation, voltage stabilization

Abstract

The paper presents researches of dependence of stabilization current from the external resistance connecting the source and the gate of the field-effect transistor in the mode of the current limiter — a two-pole terminal. At the assumption of quadratic dependence of a current from blocking voltage, experimental curves agree well with the calculation data. The established interrelation between a current of stabilization and external resistance is of interest in working out of sources and current terminators.

Published
2011-04-28
How to Cite
Karimov, A. V., Djurayev, D. R., Yodgorova, D. M., Rakhmatov, A. Z., Abdulkhayev, O. A., Kamanov, B. M., & Turayev, A. A. (2011). Some features of a current limiter on the field-effect transistor. Technology and Design in Electronic Equipment, (1–2), 25-26. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2011.1-2.25
Issue
No. 1–2 (2011): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2011 Karimov A. V., Djurayev D. R., Yodgorova D. M., Rakhmatov A. Z., Abdulkhayev O. A., Kamanov B. M., Turayev A. A.

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