No. 6 (2003): Tekhnologiya i konstruirovanie v elektronnoi apparature

Articles

• Study of semiconductor materials properties for ionizing radiation detectors

  A. I. Kondrik, G. P. Kovtun

  3-6

  • PDF (Українська)
• Growth of GaSb/InAs heterostructures by liquid phase epitaxy without substrate dissolution

  I. E. Maronchuk, V. V. Kurak, E. V. Andronova, E. A. Baganov

  6-9

  • PDF (Українська)
• Study of polysilicon-on-insulator layers at cryogenic temperatures for sensor applications

  A. A. Druzhinin, I. I. Maryamova, S. N. Matvienko, Yu. N. Khoverko

  10-13

  • PDF (Українська)
• Radiation doping of cadmium sulfide and gallium arsenide

  V. A. Mokritsky, A. S. Garkavenko, V. V. Zubarev, S. V. Lenkov

  14-17

  • PDF (Українська)
• Acousto-optic modulators for radio signal spectral analysis systems

  G. I. Braiko, D. M. Vinnik, A. I. Izhnin

  18-19

  • PDF (Українська)
• Modeling of high electron mobility transistors

  P. A. Emtsev

  20-26

  • PDF (Українська)
• Microwave field-effect transistors of medium power in the millimeter wavelength range

  A. V. Ivashchuk, V. I. Bosy, V. N. Kovalchuk

  27-31

  • PDF (Українська)
• Investigation of the temperature field of hard disk drives

  Yu. E. Nikolaenko, V. Yu. Kravets, V. S. Grabovsky

  32-34

  • PDF (Українська)
• Influence of cyclic operating mode on the reliability of thermoelectric cooling devices

  V. P. Zaikov, V. F. Moiseev

  35-38

  • PDF (Українська)
• Solar cells based on tandem GaAs–InGaAs–AlGaAs heterostructures

  S. I. Krukovsky, Yu. E. Nikolaenko

  39-40

  • PDF (Українська)
• Selection of basic elements for a two-axis multisensor inertial sensor

  N. A. Mukhoed

  41-45

  • PDF (Українська)
• Multifunctional sensor with digital indication

  I. M. Vikulin, S. V. Ilyin, V. A. Mingalev

  46-47

  • PDF (Українська)
• Influence of fluctuations conversion principle in sensors

  A. G. Golovko

  47-48

  • PDF (Українська)
• Investigation of the temperature distribution in an anisotropic plate considering its optical properties

  A. A. Ashcheulov, I. V. Gutsul

  49-50

  • PDF (Українська)
• Heat and cold chamber for photoelectronic devices

  A. Kh. Dunaenko, V. D. Fotiy, A. A. Ashcheulov

  51-52

  • PDF (Українська)
• CMOS IC master oscillator with quartz frequency stabilization

  V. I. Zolotarevsky, L. I. Samotovka, Yu. D. Mazaletsky, B. A. Balai, E. S. Tovmach, A. F. Voshchinkin

  53-55

  • PDF (Українська)
• Influence of the silicon substrate on the breakdown voltage of a branched n++–p+ junction

  V. P. Sidorenko, A. Yu. Kizyak, Yu. E. Nikolaenko

  56-58

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• Kinetics of desorption cleaning of silicon wafer surfaces in peroxide–ammonia solutions

  Yu. G. Poltavtsev, P. T. Virchenko, V. V. Kostyuk

  59-60

  • PDF (Українська)