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No. 6 (2003): Tekhnologiya i konstruirovanie v elektronnoi apparature
No. 6 (2003): Tekhnologiya i konstruirovanie v elektronnoi apparature
ISSN 2225-5818 (Print)
ISSN 2309-9992 (Online)
Published:
2003-12-30
Full Issue
FULL ISSUE PDF (Українська)
Articles
Study of semiconductor materials properties for ionizing radiation detectors
A. I. Kondrik, G. P. Kovtun
3-6
PDF (Українська)
Growth of GaSb/InAs heterostructures by liquid phase epitaxy without substrate dissolution
I. E. Maronchuk, V. V. Kurak, E. V. Andronova, E. A. Baganov
6-9
PDF (Українська)
Study of polysilicon-on-insulator layers at cryogenic temperatures for sensor applications
A. A. Druzhinin, I. I. Maryamova, S. N. Matvienko, Yu. N. Khoverko
10-13
PDF (Українська)
Radiation doping of cadmium sulfide and gallium arsenide
V. A. Mokritsky, A. S. Garkavenko, V. V. Zubarev, S. V. Lenkov
14-17
PDF (Українська)
Acousto-optic modulators for radio signal spectral analysis systems
G. I. Braiko, D. M. Vinnik, A. I. Izhnin
18-19
PDF (Українська)
Modeling of high electron mobility transistors
P. A. Emtsev
20-26
PDF (Українська)
Microwave field-effect transistors of medium power in the millimeter wavelength range
A. V. Ivashchuk, V. I. Bosy, V. N. Kovalchuk
27-31
PDF (Українська)
Investigation of the temperature field of hard disk drives
Yu. E. Nikolaenko, V. Yu. Kravets, V. S. Grabovsky
32-34
PDF (Українська)
Influence of cyclic operating mode on the reliability of thermoelectric cooling devices
V. P. Zaikov, V. F. Moiseev
35-38
PDF (Українська)
Solar cells based on tandem GaAs–InGaAs–AlGaAs heterostructures
S. I. Krukovsky, Yu. E. Nikolaenko
39-40
PDF (Українська)
Selection of basic elements for a two-axis multisensor inertial sensor
N. A. Mukhoed
41-45
PDF (Українська)
Multifunctional sensor with digital indication
I. M. Vikulin, S. V. Ilyin, V. A. Mingalev
46-47
PDF (Українська)
Influence of fluctuations conversion principle in sensors
A. G. Golovko
47-48
PDF (Українська)
Investigation of the temperature distribution in an anisotropic plate considering its optical properties
A. A. Ashcheulov, I. V. Gutsul
49-50
PDF (Українська)
Heat and cold chamber for photoelectronic devices
A. Kh. Dunaenko, V. D. Fotiy, A. A. Ashcheulov
51-52
PDF (Українська)
CMOS IC master oscillator with quartz frequency stabilization
V. I. Zolotarevsky, L. I. Samotovka, Yu. D. Mazaletsky, B. A. Balai, E. S. Tovmach, A. F. Voshchinkin
53-55
PDF (Українська)
Influence of the silicon substrate on the breakdown voltage of a branched n++–p+ junction
V. P. Sidorenko, A. Yu. Kizyak, Yu. E. Nikolaenko
56-58
PDF (Українська)
Kinetics of desorption cleaning of silicon wafer surfaces in peroxide–ammonia solutions
Yu. G. Poltavtsev, P. T. Virchenko, V. V. Kostyuk
59-60
PDF (Українська)
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