Radiation doping of cadmium sulfide and gallium arsenide

  • V. A. Mokritsky Odessa National Polytechnic University, Ukraine
  • A. S. Garkavenko National Aviation University, Kyiv, Ukraine
  • V. V. Zubarev National Aviation University, Kyiv, Ukraine
  • S. V. Lenkov National Aviation University, Kyiv, Ukraine
Keywords: radiation doping, CdS, GaAs, fast neutrons, nuclear reactions

Abstract

An experimental study was carried out to investigate the possibility of obtaining layers with hole conductivity in CdS and GaAs single crystals using radiation doping. A monoenergetic flux of fast neutrons with an energy of 14.5 MeV was applied. Measurements confirmed the formation of such layers. Nuclear reactions occurring in the crystals under neutron irradiation, which lead to acceptor doping, are described. Based on the p–n junction created in CdS by this method.

Published
2003-12-30
How to Cite
Mokritsky, V. A., Garkavenko, A. S., Zubarev, V. V., & Lenkov, S. V. (2003). Radiation doping of cadmium sulfide and gallium arsenide. Technology and Design in Electronic Equipment, (6), 14-17. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.14
Issue
No. 6 (2003): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2003 Mokritsky V. A., Garkavenko A. S., Zubarev V. V., Lenkov S. V.

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