Kinetics of desorption cleaning of silicon wafer surfaces in peroxide–ammonia solutions

  • Yu. G. Poltavtsev Intersectoral Center for Implementation of New Technologies "Eridan", Kyiv, Ukraine
  • P. T. Virchenko Intersectoral Center for Implementation of New Technologies "Eridan", Kyiv, Ukraine
  • V. V. Kostyuk Intersectoral Center for Implementation of New Technologies "Eridan", Kyiv, Ukraine
Keywords: silicon wafers, peroxide–ammonia solutions, desorption, chemical treatment

Abstract

The paper investigates desorption of cations (Na⁺, Fe³⁺, Cu²⁺, Ag⁺) and atoms (Au), as well as anions S²⁻ and Cl⁻ from the surface of silicon wafers KDB-10 with orientations (100) and (110) during treatment at 70 °C in peroxide–ammonia solutions of three compositions. The method of radioactive isotopes was used to study the desorption process.

Published
2003-12-30
How to Cite
Poltavtsev, Y. G., Virchenko, P. T., & Kostyuk, V. V. (2003). Kinetics of desorption cleaning of silicon wafer surfaces in peroxide–ammonia solutions. Technology and Design in Electronic Equipment, (6), 59-60. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.59
Issue
No. 6 (2003): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2003 Poltavtsev Yu. G., Virchenko P. T., Kostyuk V. V.

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This work is licensed under a Creative Commons Attribution 4.0 International License.