Study of polysilicon-on-insulator layers at cryogenic temperatures for sensor applications

  • A. A. Druzhinin Lviv Polytechnic National University, Ukraine
  • I. I. Maryamova Lviv Polytechnic National University, Ukraine
  • S. N. Matvienko Lviv Polytechnic National University, Ukraine
  • Yu. N. Khoverko Lviv Polytechnic National University, Ukraine
Keywords: polysilicon-on-insulator, laser recrystallization, sensor, cryogenic temperatures, magnetic fields

Abstract

Samples of p-type polysilicon on dielectric substrates were investigated in the temperature range of 4.2–300 K and magnetic fields up to 14 T, as well as the effect of mechanical strain on their resistance. It was shown that lightly doped, non-recrystallized poly-Si resistors (2.4·1018 cm–3) can be recommended as highly sensitive thermoresistors. For piezoresistive sensors of mechanical quantities, heavily doped, laser-recrystallized poly-Si resistors (~1.7·1020 cm–3) are recommended. These resistors also demonstrate the highest stability under strong magnetic fields.

Published
2003-12-30
How to Cite
Druzhinin, A. A., Maryamova, I. I., Matvienko, S. N., & Khoverko, Y. N. (2003). Study of polysilicon-on-insulator layers at cryogenic temperatures for sensor applications. Technology and Design in Electronic Equipment, (6), 10-13. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.10
Issue
No. 6 (2003): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2003 Druzhinin A. A., Maryamova I. I., Matvienko S. N., Khoverko Yu. N.

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