No. 2 (2003): Tekhnologiya i konstruirovanie v elektronnoi apparature

Articles

• Analysis of fault-tolerant onboard complex structures using Industry electronic components

  V. S. Kharchenko, Yu. B. Yurchenko

  3-10

  • PDF (Українська)
• Mathematical formulation of the synthesis problem for layout schemes of basic supporting structures

  A. S. Kondrashov, V. I. Shelest

  11-14

  • PDF (Українська)
• Planar LC resonators with distributed parameters and their application

  O. N. Negodenko, V. I. Sementsov, A. A. Khvostenko, D. V. Zaruba

  15-17

  • PDF (Українська)
• Calculation of thin‑film Schottky‑gate transistors based on amorphous semiconductors

  A. K. Mamedov

  18-20

  • PDF (Українська)
• Enhancing the informativeness of composite material inspection using the low‑velocity impact method

  V. S. Eremenko, S. I. Eremenko

  21-24

  • PDF (Українська)
• Method for detection and estimation of impact excitations

  Yu. V. Ermilov

  25-29

  • PDF (Українська)
• Determination of beam diameter using a photodetector

  L. F. Vikulina, V. A. Mingalyov

  30-31

  • PDF (Українська)
• Method for measuring the mass (weight) of moving objects

  M. D. Skubilin

  31-32

  • PDF (Українська)
• Evaluation of the technological process of VLSI manufacturing based on the stability of its structural elements

  A. M. Vanteev, A. I. Korobov

  33-35

  • PDF (Українська)
• Modeling of contactless chemical‑mechanical processes for semiconductor substrate fabrication

  N. N. Grigoriev, M. Yu. Kravetsky, G. A. Pashchenko, S. A. Sypko, A. V. Fomin

  36-40

  • PDF (Українська)
• Installation for thick‑layer anodizing of aluminum

  V. A. Sokol, E. P. Ignashev

  40-41

  • PDF (Українська)
• Photodiodes based on gallium and indium monoselenides

  Z. D. Kovaliuk, V. P. Makhniy, A. I. Yanchuk

  42-44

  • PDF (Українська)
• Optoelectronic short‑distance rangefinder for dynamic systems

  Yu. F. Vaksman, V. I. Santoniy, V. V. Yanko, I. A. Ivanchenko, L. M. Budiyanskaya

  44-49

  • PDF (Українська)
• Multilayer heterostructures based on polycrystalline A2B6 compound films

  K. V. Kolezhuk, V. N. Komashchenko, G. I. Sheremetova, Yu. N. Bobrenko

  49-50

  • PDF (Українська)
• Structures based on the "silicon–gallium arsenide" heterojunction for integrated optrons

  L. L. Terletskaya, L. F. Kalinichenko, V. V. Golubtsov

  51-53

  • PDF (Українська)
• Investigation of microelectronic photodetector devices with an artificial resistor

  V. I. Korneichuk, O. A. Rogalevich

  54-55

  • PDF (Українська)
• Devices for determining water salinity based on inductive balance sensors

  O. N. Negodenko, S. A. Cherevko

  56-57

  • PDF (Українська)
• Explosive crystallization of thin semiconductor films under γ‑ray irradiation

  E. F. Khramov, G. V. Prokhorov, N. M. Pelikhaty, A. K. Hnap

  58-60

  • PDF (Українська)