Photodiodes based on gallium and indium monoselenides

  • Z. D. Kovaliuk I. M. Frantsevich Institute for problems of materials science of NAS of Ukraine, Chernivtsi department, Ukraine
  • V. P. Makhniy I. M. Frantsevich Institute for problems of materials science of NAS of Ukraine, Chernivtsi department, Ukraine
  • A. I. Yanchuk Yurii Fedkovych Chernivtsi National University, Ukraine
Keywords: photodiodes, gallium monoselenide, indium monoselenide, electrical properties, photoelectric properties, p–n junction, heterojunction

Abstract

The paper analyzes the electrical and photoelectric properties of rectifying structures of various types (surface‑barrier diodes, p–n homojunctions, and heterojunctions) based on gallium and indium monoselenides. The influence of the parameters of the base materials on the main technical characteristics and diode parameters is discussed, along with possible ways to improve them.

Published
2003-04-30
How to Cite
Kovaliuk, Z. D., Makhniy, V. P., & Yanchuk, A. I. (2003). Photodiodes based on gallium and indium monoselenides. Technology and Design in Electronic Equipment, (2), 42-44. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.2.42
Issue
No. 2 (2003): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2003 Z. D. Kovaliuk, V. P. Makhniy, A. I. Yanchuk

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