Investigation of microelectronic photodetector devices with an artificial resistor

  • V. I. Korneichuk Odesa National Academy of Telecommunications named after A. S. Popov, Ukraine
  • O. A. Rogalevich Odesa National Academy of Telecommunications named after A. S. Popov, Ukraine
Keywords: photodetector devices, IR signals, p–i–n photodiode, operational amplifier, artificial resistor, noise temperature

Abstract

Photodetector devices for pulsed infrared signals based on a silicon p–i–n photodiode and an operational amplifier were experimentally investigated. In the feedback circuit of the amplifier, an "artificial" resistor was included, which exhibits lower noise temperature compared to a conventional resistor.

Published
2003-04-30
How to Cite
Korneichuk, V. I., & Rogalevich, O. A. (2003). Investigation of microelectronic photodetector devices with an artificial resistor. Technology and Design in Electronic Equipment, (2), 54-55. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.2.54
Issue
No. 2 (2003): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2003 V. I. Korneichuk, O. A. Rogalevich

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