Development of a mathematical model for a CdS-based photosensitive Hall sensor
Abstract
The paper proposes a mathematical model of a photosensitive Hall sensor based on a CdS single crystal which uses the internal photoelectric effect. The model describes the change in the concentration and mobility of charge carriers under the influence of irradiation and allows us to estimate the increase in the sensitivity of the sensor to a magnetic field. The mathematical model accurately describes the increase in Hall voltage when the sensor current exceeds 40 mA (error margin of less than 5%). Experiments showed a 2.8-fold increase in sensor sensitivity in the low-current sensor mode, which is partially explained by noise and additional effects in the crystal. The authors propose the materials and sensor topology that will maximize Hall voltage to obtain maximum sensor sensitivity. The comparison of theoretical results and experimental data confirmed a twofold increase in the Hall voltage under illumination. The developed approach can be used to optimize planar sensors in systems that require high accuracy and energy efficiency.
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