Simulation of temperature conditions in the elements of microelectronic devices

  • V. I. Gavrysh Lviv Polytechnic National University, Lviv, Ukraine
  • A. I. Kosach Lviv Polytechnic National University, Lviv, Ukraine
Keywords: isotropic band, foreign inclusions, heat flow, perfect thermal contact, heat transfer, convective heat transfer, thermal conductivity, excess temperature

Abstract

The heat equation with discontinuous and singular coefficients for isotropic band with foreign rectangular inclusion has been built with the use of generalized functions based method. Using the of integral transformations, the analytical solution of this equation has been obtained in case when on one of the band bounds the convective heat transfer with the environment takes place, but the other is under the heat flow. The piecewise-linear approximation of the required temperature at the boundaries of foreign inclusions using generalized functions has been conducted.

Published
2011-04-28
How to Cite
Gavrysh, V. I., & Kosach, A. I. (2011). Simulation of temperature conditions in the elements of microelectronic devices. Technology and Design in Electronic Equipment, (1–2), 27-30. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2011.1-2.27
Issue
No. 1–2 (2011): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2011 Gavrysh V. I., Kosach A. I.

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