Optimization of carrier concentration distribution across epitaxial layer thickness

  • A. V. Karimov NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • D. M. Yodgorova NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • F. A. Giyasova NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • R. A. Saidova NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • Sh. A. Haydarov NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
Keywords: liquid-phase epitaxy, AIII–BV semiconductors, piston device, impurity concentration gradient, internal electric fields

Abstract

A piston-type device for liquid-phase epitaxy of AIIIBV semiconductor compounds has been modified. The possibility of controlling the impurity concentration gradient, which creates internal electric fields in the photodetecting and active regions of semiconductor structures, is demonstrated. This control is achieved by selecting the appropriate extrusion pattern of the solution–melt.

Published
2007-12-30
How to Cite
Karimov, A. V., Yodgorova, D. M., Giyasova, F. A., Saidova, R. A., & Haydarov, S. A. (2007). Optimization of carrier concentration distribution across epitaxial layer thickness. Technology and Design in Electronic Equipment, (6), 57-61. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.6.57
Issue
No. 6 (2007): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2007 Karimov A. V., Yodgorova D. M., Giyasova F. A., Saidova R. A., Haydarov Sh. A.

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