Formation of nanostructured iridium and polycluster diamond film

  • A. F. Belyanin Central Research Technological Institute “Technomash-VOS”, Moscow, Russia
  • A. F. Pal' Skobeltsyn Institute of Nuclear Physics, Moscow, Russia
  • M. I. Samoylovich Central Research Technological Institute “Technomash-VOS”, Moscow, Russia
  • N. V. Suetin Skobeltsyn Institute of Nuclear Physics, Moscow, Russia
  • N. N. Dzbanovskiy Bochvar Institute of Inorganic Materials (VNIINM), Moscow, Russia
  • V. S. Mitin Central Research Technological Institute “Technomash-VOS”, Moscow, Russia
  • P. V. Pashchenko Central Research Technological Institute “Technomash-VOS”, Moscow, Russia
  • M. A. Timofeev Skobeltsyn Institute of Nuclear Physics, Moscow, Russia
Keywords: nanostructured iridium and diamond films, magnetron sputtering, microwave discharge, microelectronics

Abstract

Iridium films and layered “iridium–diamond” structures were formed on Al₂O₃, MgO, and SrTiO₃ substrates. Iridium films were deposited by magnetron sputtering, while polycluster diamond films were obtained using the microwave discharge method. The structure of iridium and diamond films was studied as a function of deposition conditions. The potential applications of polycluster diamond films as heat sinks for hybrid integrated circuits and as control grids in electronic devices are discussed.

Published
2007-12-30
How to Cite
Belyanin, A. F., Pal’, A. F., Samoylovich, M. I., Suetin, N. V., Dzbanovskiy, N. N., Mitin, V. S., Pashchenko, P. V., & Timofeev, M. A. (2007). Formation of nanostructured iridium and polycluster diamond film. Technology and Design in Electronic Equipment, (6), 50-56. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.6.50