Resistance change of power diodes under surge current pulses

  • S. P. Pavljuk Taras Shevchenko National University of Kyiv, Ukraine
  • S. M. Savitskiy Taras Shevchenko National University of Kyiv, Ukraine
  • R. B. Soltys Taras Shevchenko National University of Kyiv, Ukraine
  • I. Yu. Tishchenko Taras Shevchenko National University of Kyiv, Ukraine
Keywords: surge current, resistance, heating, defects, recombination centers, carrier lifetime

Abstract

The causes of failure of semiconductor power diodes under the action of surge current pulses have been investigated. It is shown that currents below the surge level do not affect the diode resistance or reliability. When the current reaches the surge value, the diode resistance increases after each repeated pulse, and after several pulses the diode fails. In this case, the forward resistance increases approximately threefold, while the temperature significantly exceeds the permissible limit. An explanation of the observed effects is proposed.

Published
2007-12-30
How to Cite
Pavljuk, S. P., Savitskiy, S. M., Soltys, R. B., & Tishchenko, I. Y. (2007). Resistance change of power diodes under surge current pulses. Technology and Design in Electronic Equipment, (6), 33-35. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.6.33
Issue
No. 6 (2007): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2007 Pavljuk S. P., Savitskiy S. M., Soltys R. B., Tishchenko I. Yu.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.