Influence of the silicon substrate on the breakdown voltage of a branched n++–p+ junction

  • V. P. Sidorenko Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • A. Yu. Kizyak Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • Yu. E. Nikolaenko Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
Keywords: silicon substrate, breakdown voltage, n –p junction, microdefects, oxygen, carbon, VLSI

Abstract

The paper examines the influence of microdefects, as well as oxygen and carbon impurities in the silicon substrate, on the breakdown voltage of an uncontrolled n++–p+ junction. The mechanism of oxygen impurity impact on the type of breakdown is briefly discussed. Practical applications of the results in VLSI manufacturing technology are considered.

Published
2003-12-30
How to Cite
Sidorenko, V. P., Kizyak, A. Y., & Nikolaenko, Y. E. (2003). Influence of the silicon substrate on the breakdown voltage of a branched n++–p+ junction. Technology and Design in Electronic Equipment, (6), 56-58. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.56
Issue
No. 6 (2003): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2003 Sidorenko V. P., Kizyak A. Yu., Nikolaenko Yu. E.

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