Solar cells based on tandem GaAs–InGaAs–AlGaAs heterostructures

  • S. I. Krukovsky SPA «Karat», Lviv, Ukraine
  • Yu. E. Nikolaenko SPA «Karat», Lviv, Ukraine
Keywords: photovoltaic converters, multilayer tandem heterostructures, low-temperature LPE, efficiency, doping, p–n junction

Abstract

The paper reports on the fabrication and investigation of tandem solar cells based on GaAs–InGaAs–AlGaAs with an active area of 0.93 cm². A tunnel junction is used to connect the upper (AlGaAs) and lower (InGaAs) cells of the tandem solar element. Under spectral conditions AM 1.5 (1 sun), the measured short-circuit current density and open-circuit voltage reached 14.2–15.1 mA/cm² and 2.35–2.43 V, respectively, while the efficiency was 26.4–30.1%.

Published
2003-12-30
How to Cite
Krukovsky, S. I., & Nikolaenko, Y. E. (2003). Solar cells based on tandem GaAs–InGaAs–AlGaAs heterostructures. Technology and Design in Electronic Equipment, (6), 39-40. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.39
Issue
No. 6 (2003): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2003 Krukovsky S. I., Nikolaenko Yu. E.

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This work is licensed under a Creative Commons Attribution 4.0 International License.