Study of semiconductor materials properties for ionizing radiation detectors

  • A. I. Kondrik National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • G. P. Kovtun National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
Keywords: CdZnTe detectors, ionizing radiation, electron drift mobility, band gap width, specific resistivity, computer modeling

Abstract

Using computer modeling, the drift mobility of conduction electrons (µ) and the specific resistivity (ρ) of CdZnTe detector material were investigated as functions of impurity composition and the molar fraction of CdTe (CCdTe ) at a temperature of T = 300 K. It was established that an increase in the band gap Eg0 (at T = 0) from 1.6 eV (corresponding to CCdTe = 1) to 1.8 eV (CCdTe ≈ 0.8) leads to an increase in ρ by approximately two orders of magnitude. With the initial background impurity composition preserved, a further increase in Eg0 up to 2.1 eV (CCdTe ≈ 0.5) does not significantly affect the value of Eg0.

Published
2003-12-30
How to Cite
Kondrik, A. I., & Kovtun, G. P. (2003). Study of semiconductor materials properties for ionizing radiation detectors. Technology and Design in Electronic Equipment, (6), 3-6. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.03
Issue
No. 6 (2003): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2003 Kondrik A. I., Kovtun G. P.

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