Multilayer heterostructures based on polycrystalline A2B6 compound films

  • K. V. Kolezhuk V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • V. N. Komashchenko V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • G. I. Sheremetova V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • Yu. N. Bobrenko V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
Keywords: multilayer heterostructures, polycrystalline films, A2B6 compounds, photoelectric devices, potential barriers

Abstract

The applicability of certain heterostructure concepts to polycrystalline objects based on lattice‑mismatched A2B6 compounds is demonstrated. The study highlights the prospects of such multilayer heterostructures for the development of photoelectric devices. The presence of potential barriers at the interface of semiconductors with different bandgap widths makes it possible to minimize recombination losses and to design new types of efficient radiation sensors based on wide‑bandgap semiconductors grown on narrow‑bandgap substrates.

Published
2003-04-30
How to Cite
Kolezhuk, K. V., Komashchenko, V. N., Sheremetova, G. I., & Bobrenko, Y. N. (2003). Multilayer heterostructures based on polycrystalline A2B6 compound films. Technology and Design in Electronic Equipment, (2), 49-50. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.2.49
Issue
No. 2 (2003): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2003 K. V. Kolezhuk, V. N. Komashchenko, G. I. Sheremetova, Yu. N. Bobrenko

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