Modeling of contactless chemical‑mechanical processes for semiconductor substrate fabrication

Abstract

A physical model has been developed for operations of contactless chemical‑mechanical polishing and chemical cutting. Analytical expressions were obtained that relate the geometry of the formed surface and the processing rate to the physical parameters of the ongoing processes. These results can be applied in the development of etching solutions and in selecting optimal technological regimes for contactless, non‑abrasive processing of ingots to produce semiconductor substrates.