Calculation of thin‑film Schottky‑gate transistors based on amorphous semiconductors

  • A. K. Mamedov Azerbaijan Technical University, Baku, Azerbaijan
Keywords: thin‑film transistor, Schottky gate, amorphous semiconductor, mathematical model, phthalocyanine, display devices

Abstract

A mathematical model of a thin‑film transistor with a Schottky gate based on amorphous semiconductor layers is proposed. Using the presented model, the main parameters and characteristics of a transistor based on an organic phthalocyanine film were calculated. The study highlights the prospects of using such transistors as switching elements in information display devices.

Published
2003-04-30
How to Cite
Mamedov, A. K. (2003). Calculation of thin‑film Schottky‑gate transistors based on amorphous semiconductors. Technology and Design in Electronic Equipment, (2), 18-20. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.2.18
Issue
No. 2 (2003): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2003 A. K. Mamedov

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