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No. 2–3 (2014): Tekhnologiya i konstruirovanie v elektronnoi apparature
No. 2–3 (2014): Tekhnologiya i konstruirovanie v elektronnoi apparature
ISSN 2225-5818 (Print)
ISSN 2309-9992 (Online)
Published:
2014-06-23
Full Issue
FULL ISSUE PDF (Українська)
Articles
Classification of methods for measuring current-voltage characteristics of semiconductor devices
Ia. O. Iermolenko
3-11
PDF (Українська)
Rapid method to estimate temperature changes in electronics elements
G. A. Oborskii, O. S. Savel'eva, Yu. V. Shikhireva
12-17
PDF (Українська)
Inverse class-f power amplifier using slot resonators as a harmonic filter
Yu. V. Rassokhina, V. G. Krizhanovski, V. A. Kovalenko, P. Colantonio, R. Giofre
18-23
PDF (Українська)
Two-channel microwave power switch construction on the basis of electrically active semiconductor structures
Yu. N. Lavrich, S. V. Plaksin, V. Ya. Kris, L. M. Pogorelaya, I. I. Sokolovskiy
24-27
PDF (Українська)
Data transmission system with encryption by chaotic sequences
R. L. Politans’kyy, P. M. Shpatar, A. V. Hres, A. D. Verigha
28-32
PDF (Українська)
Circuitry of power supplies for pulsed arc welding with chaotic current oscillations
V. N. Sidorets, A. I. Bushma, A. M. Zhernosekov
33-36
PDF (Українська)
Coaxial heat pipe for cooling of a laser’s reflector
A. N. Gershuni, A. P. Nishchik
37-41
PDF (Українська)
Physical concept and calculation of boiling point in a pulsating heat pipe
A. N. Naumova, V. Yu. Kravets, Yu. Ye. Nikolaenko
42-47
PDF (Українська)
Obtaining raised density connections by thermosonic microwelding in 3D integrated microcircuits
V. L. Lanin, I. B. Petuhov
48-53
PDF (Українська)
Physical properties and band structure of crystals (3HgTe)1–x(Al2Te3)x, doped with manganese
P. D. Maryanchuk, L. N. Dymko, T. R. Romanishyn, T. T. Kovalyuk, V. V. Brus, M. N. Solovan, A. I. Mostovoy
54-60
PDF (Українська)
Sharp interfaces in p+-AlGaAs/n-GaAs epitaxial structures obtained by MOCVD
N. M. Vakiv, S. I. Krukovskii, S. Yu. Larkin, A. Yu. Avksent'ev, R. S. Krukovskii
61-66
PDF (Українська)
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