Inverse class-f power amplifier using slot resonators as a harmonic filter

  • Yu. V. Rassokhina Donetsk National University, Donetsk, Ukraine
  • V. G. Krizhanovski Donetsk National University, Donetsk, Ukraine
  • V. A. Kovalenko Donetsk National University, Donetsk, Ukraine
  • P. Colantonio University of Rome Tor Vergata, Roma, Italy
  • R. Giofre University of Rome Tor Vergata, Roma, Italy
Keywords: power amplifiers, class F, inverse class F, microstrip line, slot resonator

Abstract

The authors proposed and experimentally verified the power amplifier circuit of inverse class F (F–1) based on GaN transistor NPTB00004, operating at 1,7 GHz. The novelty of this scheme is the application of a three-layer structure based on slot rectangular shaped resonators in the ground plane of the microstrip transmission line as a filter of higher harmonics. To control the levels of the second and third harmonics in the output signal spectrum and simultaneously to match the 50 ohm load at the operating frequency of the amplifier, a planar periodic structure is used, consisting of two slot resonators of different lengths. Power added efficiency for experimental model of the amplifier is 60% at an output power of 3.9 W and a gain factor of 13 dB.

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Published
2014-06-23
How to Cite
Rassokhina, Y. V., Krizhanovski, V. G., Kovalenko, V. A., Colantonio, P., & Giofre, R. (2014). Inverse class-f power amplifier using slot resonators as a harmonic filter. Technology and Design in Electronic Equipment, (2–3), 18-23. https://doi.org/10.15222/TKEA2014.2-3.18