Technology and design in electronic equipment, 2023, no. 1-2, pp. 34-42.
DOI: 10.15222/TKEA2023.1-2.34
UDC 621.315.592
Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices
(in English)
Polukhin O. S.1, Kravchina V. V.2

Ukraine, Zaporizhzhya, 1"Element- Preobrazovatel" Ltd; Mykolaiv, 2Mykolaiv Polytechnic Vocational College.

The paper considers using the technology of sheet thermomigration of three-dimensional zones, which implements p+-Si* liquid epitaxy on an n-Si wafer, to produce power semiconductor devices with crystals having thinned layers of high-resistive n-Si base, which are surrounded by p+-Si* side insulation regions, and thickened p+-Si* emitter layers. This technology, which has a number of advantages, was used to create diode arrays in n-Si with a specific resistance of 20 Ω·cm. For recrystallization, p+-Si* wafers with a resistivity of 0.005 Ω·cm were used. The produced direct polarity diodes had a breakdown voltage of 1000 V, a forward voltage drop of 1.17 V at a current density of 2.0 A/mm2, and a reverse resistance recovery time of trr = 1.5 μs. Additional use of the technology of creation of recombination centers allowed to further improve trr to 0.5 μs.

Keywords: Al+Si melt, diode, sheet thermomigration, three-dimensional zones.

Received 08.02 2023
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