Ukraine, Zaporizhzhya, ¹"Element- Preobrazovatel" Ltd; Mykolaiv, ²Mykolaiv Polytechnic Vocational College.

The paper considers using the technology of sheet thermomigration of three-dimensional zones, which implements p⁺-Si^* liquid epitaxy on an n-Si wafer, to produce power semiconductor devices with crystals having thinned layers of high-resistive n-Si base, which are surrounded by p⁺-Si^* side insulation regions, and thickened p⁺-Si^* emitter layers. This technology, which has a number of advantages, was used to create diode arrays in n-Si with a specific resistance of 20 Ω·cm. For recrystallization, p⁺-Si^* wafers with a resistivity of 0.005 Ω·cm were used. The produced direct polarity diodes had a breakdown voltage of 1000 V, a forward voltage drop of 1.17 V at a current density of 2.0 A/mm², and a reverse resistance recovery time of t_rr = 1.5 μs. Additional use of the technology of creation of recombination centers allowed to further improve t_rr to 0.5 μs.

Keywords: Al+Si melt, diode, sheet thermomigration, three-dimensional zones.

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