Film heterojunction with nanocluster subsystem for new type of photocells

Volodymyr Kovalchuk; Diana Popryaga; Dmytro Dyachok

doi:10.15222/TKEA2025.3-4.09

Volodymyr Kovalchuk Odessa Technological University IT STEP, Ukraine https://orcid.org/0000-0001-7460-8092
Diana Popryaga South Ukrainian National Pedagogical University named after K. D. Ushynsky, Odesа, Ukraine https://orcid.org/0009-0003-4164-4160
Dmytro Dyachok South Ukrainian National Pedagogical University named after K. D. Ushynsky, Odesа, Ukraine

DOI: https://doi.org/10.15222/TKEA2025.3-4.09

Keywords: heterojunction, film, nanocluster, subsystem, photocell

Abstract

The paper describes the manufacturing technology and presents the results of studies of a pCu₂S–nSi heterojunction (HJ) and an HJ based on it, containing a nanocluster (NC) subsystem. It is shown that the presence of an NC subsystem at the interface between the p-type Cu₂S film and the n-type Si substrate significantly increases the overall sensitivity of the samples under high illumination conditions. The operating mode of such an HJ as a highly sensitive valve photocell has been determined. It has also been demonstrated that these transitions are photoelectrically active in different spectral regions. The observed effects are extensive in nature, being largely determined by the geometry and morphology of the nanocluster centers rather than by the type of atoms from which they are formed.

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