Laser ablation and photostimulated passivation of the surface of Cd1–хZnхTe crystals

  • Yu. A. Zagoruiko Institute for Single Crystals of NASU, Kharkiv, Ukraine
  • N. O. Kovalenko Institute for Single Crystals of NASU, Kharkiv, Ukraine
  • V. A. Khristyan Institute for Single Crystals of NASU, Kharkiv, Ukraine
  • O. A. Fedorenko Institute for Single Crystals of NASU, Kharkiv, Ukraine
  • A. S. Gerasimenko Institute for Single Crystals of NASU, Kharkiv, Ukraine
  • M. V. Dobrotvorskaya Institute for Single Crystals of NASU, Kharkiv, Ukraine
  • P. V. Mateychenko Institute for Single Crystals of NASU, Kharkiv, Ukraine
Keywords: Cd1–хZnхTe detector, photostimulated surface passivation, laser ablation, leakage currents

Abstract

A new physical method of Cd1–хZnхTe-detectors passivation is proposed — the treatment of crystal surface by a laser ablation (LA) with subsequent photostimulated passivation (PhSP), during wich a high-resistance oxide layer is formed on it’s surface after the surface cleaning under intensive light irradiation effect. It is shown that the method of LA+PhSP is manufacturable and in comparison with PhSP and PhESP methods developed earlier provides a thick, homogeneous and high-oxide films, which significantly increases the surface resistivity of Cd1–хZnхTe samples and reduces leakage currents in them.

Published
2011-06-28
How to Cite
Zagoruiko, Y. A., Kovalenko, N. O., Khristyan, V. A., Fedorenko, O. A., Gerasimenko, A. S., Dobrotvorskaya, M. V., & Mateychenko, P. V. (2011). Laser ablation and photostimulated passivation of the surface of Cd1–хZnхTe crystals. Technology and Design in Electronic Equipment, (3), 35-36. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2011.3.35
Issue
No. 3 (2011): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2011 Zagoruiko Yu. A., Kovalenko N. O., Khristyan V. A., Fedorenko O. A., Gerasimenko A. S., Dobrotvorskaya M. V., Mateychenko P. V.

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This work is licensed under a Creative Commons Attribution 4.0 International License.