Silicic p–i–n-photodiode with small dark current

  • Yu. G. Dobrovolskiy SPF «Tensor», Chernivtsy, Ukraine
  • A. A. Ashcheulov SPF «Tensor», Chernivtsy, Ukraine
Keywords: p-i-n-photodiode, sensitivity, dark current

Abstract

The influence of circular metallization of the reverse side of p–i–n-photodiode crystal based on highly ohm silicon on it’s characteristics are explored. The dark current can be decreased by an order, at the same time losses of current monochromatic sensitiveness on a wave-length 1,06 mkm do not exceed 15%. The characteristics of the offered photodiode show that it can be recommended as base construction at serial product designing.

Published
2011-06-28
How to Cite
Dobrovolskiy, Y. G., & Ashcheulov, A. A. (2011). Silicic p–i–n-photodiode with small dark current. Technology and Design in Electronic Equipment, (3), 27-31. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2011.3.27
Issue
No. 3 (2011): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2011 Dobrovolskiy Yu. G., Ashcheulov A. A.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.