Gasosensing elements on the base of SiPcCl2 films

  • Kh. S. Alieva National Aerospace Agency, Baku, Azerbaijan
  • S. S. Sulejmanov National Aerospace Agency, Baku, Azerbaijan
  • M. N. Murshudli Institute of Radiational Problems of NAS, Baku, Azerbaijan
Keywords: gas-sensitive element, resistive structure, nitrogen oxides, coating films, detecting characteristics of silicon phthalocyanine

Abstract

Influence of technological parameters (reception conditions, heat treatment and thickness) on electric and sensing properties of SiPcCl2 films is analysed. The films are received by a evaporating method. High sensitivity to oxides of nitrogen is shown. Electric and sensing properties are compared at gas and temperatures influences. Temperature limits of work are determined. Small response and desorption times with high sensitivity allow using structures with silicon phthalocyanine films in gasosensors.

Published
2010-04-26
How to Cite
Alieva, K. S., Sulejmanov, S. S., & Murshudli, M. N. (2010). Gasosensing elements on the base of SiPcCl2 films. Technology and Design in Electronic Equipment, (2), 58-61. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.2.58
Issue
No. 2 (2010): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2010 Alieva Kh. S., Sulejmanov S. S., Murshudli M. N.

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