Photoelectrostimulated passivation of spectrometric Cd1–xZnxTe-detectors

Abstract

A new physical method of Cd_1–xZn_xTe-detector’s treatment – photoelectrostimulated passivation is developed. In its frames, oxidation of the sample followed by the formation of high-resistance oxide layer on the surface occurs at simultaneous action of both intense light radiation and electric field. It is shown that the method is easily realized and provides the obtaining of thick high-resistance oxide films, that essentially increases the surface electrical resistance of Cd_1–xZn_xTe-samples and diminishes leakage currents in them.