The photodiode of UV-range on the basis of ZnSe

  • V. L. Perevertailo Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • Yu. G. Dobrovol’skiy SPF «Tensor», Chernivtsy, Ukraine
  • V. M. Popov Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • A. P. Pokanevich Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • V. M. Matskevich Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • V. D. Rizhikov Institute for Scintillation Materials of the NAS of Ukraine, Kharkiv, Ukraine
  • B. G. Shabashkevich SPF «Tensor», Chernivtsy, Ukraine
  • V. G. Yur’yev Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
Keywords: Schottky photodiode, UV radiation, radiometry, dosimetry

Abstract

The construction and technology of Shottky photodiode on the basis of ZnSe, sensible in the ultraviolet region of spectrum are considered. Researches of electrophysical and photo-electric descriptions of photodiodes of Shottky Nі–ZnSe(Te,O)–Іn are conducted, and it is shown, that they can be applied in devices for radiometry and dissymmetry UV radiations in the ranges UVA, UVB and UVC. Comparison of parameters of developed UV photodiodes based on ZnSe with analogues showed that small capacitance and low value of dark current is their substantial difference of other ones.

Published
2010-04-26
How to Cite
Perevertailo, V. L., Dobrovol’skiy, Y. G., Popov, V. M., Pokanevich, A. P., Matskevich, V. M., Rizhikov, V. D., Shabashkevich, B. G., & Yur’yev, V. G. (2010). The photodiode of UV-range on the basis of ZnSe. Technology and Design in Electronic Equipment, (2), 17-21. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.2.17
Issue
No. 2 (2010): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2010 Perevertailo V. L., Dobrovol’skiy Yu. G., Popov V. M., Pokanevich A. P., Matskevich V. M., Pizhikov V. D., Shabashkevich B. G., Yur’yev V. G.

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