Modification of organosilicon films properties during the thermal and plasma treatments

  • A. E. Ivanchykau Semiconductor Devices Plant Scientific Production Association «Integral», Minsk, Belarus
  • A. M. Kisel Semiconductor Devices Plant Scientific Production Association «Integral», Minsk, Belarus
  • A. B Medvedeva Semiconductor Devices Plant Scientific Production Association «Integral», Minsk, Belarus
  • V. I. Plebanovich Semiconductor Devices Plant Scientific Production Association «Integral», Minsk, Belarus
Keywords: film structure, etching rate, transmission spectrum

Abstract

It has been established that the quality of the film after various technological operations in the manufacture of ICs can be assessed by changes in the film's transmission spectrum. This makes it possible to eliminate IC defects caused by metal layer breakage.

Published
2009-04-30
How to Cite
Ivanchykau, A. E., Kisel, A. M., Medvedeva, A. B., & Plebanovich, V. I. (2009). Modification of organosilicon films properties during the thermal and plasma treatments. Technology and Design in Electronic Equipment, (2), 46-50. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.2.46
Issue
No. 2 (2009): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2009 Ivanchykau A. E., Kisel A. M., Medvedeva A. B., Plebanovich V. I.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.