Heterostructures obtained by annealing InSe single crystals in sulfur vapors

  • Z. D. Kovalyuk I. M. Frantsevich Institute for problems of materials science of NAS of Ukraine, Chernivtsi department, Ukraine
  • O. I. Kushnir I. M. Frantsevich Institute for problems of materials science of NAS of Ukraine, Chernivtsi department, Ukraine
  • O. M. Sidor I. M. Frantsevich Institute for problems of materials science of NAS of Ukraine, Chernivtsi department, Ukraine
  • V. V. Netyaga I. M. Frantsevich Institute for problems of materials science of NAS of Ukraine, Chernivtsi department, Ukraine
Keywords: heterostructure, p-n-InSe, InS-film

Abstract

It has been established that during prolonged (120 h) thermal treatment of InSe single crystals in sulfur vapors, an InS/InSe heterostructure is formed. The investigated electrical and photoelectrical characteristics of the obtained structures demonstrated a significant superiority of the anisotype heterostructure n-InS/p-InSe over its isotype analogue. A comparison of the spectral characteristics of n-InS/p-InSe heterostructures obtained at different annealing durations has been carried out. For the InS film, the values of interband transitions as well as the parameters of the elementary crystalline cell have been determined.

Published
2009-02-27
How to Cite
Kovalyuk, Z. D., Kushnir, O. I., Sidor, O. M., & Netyaga, V. V. (2009). Heterostructures obtained by annealing InSe single crystals in sulfur vapors. Technology and Design in Electronic Equipment, (1), 61-62. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.1.61
Issue
No. 1 (2009): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2009 Kovalyuk Z. D., Kushnir O. I., Sidor O. M., Netyaga V. V.

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