Pre-epitaxial treatment of GaSb substrates for liquid-phase growth of homoepitaxial layers

  • О. V. Andronova Kherson National Technical University, Ukraine
  • V. V. Kurak Kherson National Technical University, Ukraine
Keywords: GaSb substrate, substrate treatment, chemical etching, liquid phase epitaxy

Abstract

The results of investigation to find out the optimal conditions of pre-epitaxial GaSb substrate treatment by chemical etching in inorganic acid mixes are offered. It is shown that application of two-stage chemical treatment in HNO3:HF:H2O=3:1:2 and H2O2:HF:H2O=4:1:15 etchants give a possibility to satisfy the requirements for GaSb substrate in case of liquid phase epitaxy. Optimal conditions of pre-epitaxial GaSb substrate treatment provided the surface roughness value of no more than 0,05 mm and uniform substrate wetting by solution-melt are pointed out.

Published
2008-12-30
How to Cite
AndronovaО. V., & Kurak, V. V. (2008). Pre-epitaxial treatment of GaSb substrates for liquid-phase growth of homoepitaxial layers. Technology and Design in Electronic Equipment, (6), 41-43. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.6.41
Issue
No. 6 (2008): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2008 Andronova О. V., Kurak V. V.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.