Investigation of thermometric characteristics of p+–n-GaP diodes

  • V. A. Krasnov V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • Yu. M. Shwarts V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • М. M. Shwarts V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • D. P. Kopko V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • S. Yu. Erohin V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • A. М. Fonkich V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • S. V. Shutov V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • N. I. Sypko V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
Keywords: sensor, temperature, diode, GaP

Abstract

The method of reception of p+–n-diode epitaxial structures of GaP from liquid phase is developed. In the temperature range of 80—520 K thermometric and current-voltage characteristics of test models of diode temperature sensors are measured and their basic technical parameters are determined. Perspectivity of developed GaP-diodes application as sensitive elements of high-temperature sensor is shown.

Published
2008-12-30
How to Cite
Krasnov, V. A., Shwarts, Y. M., ShwartsМ. M., Kopko, D. P., Erohin, S. Y., FonkichA. М., Shutov, S. V., & Sypko, N. I. (2008). Investigation of thermometric characteristics of p+–n-GaP diodes. Technology and Design in Electronic Equipment, (6), 38-40. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.6.38
Issue
No. 6 (2008): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2008 Krasnov V. A., Shwarts Yu. M., Shwarts М. M., Kopko D. P., Erohin S. Yu., Fonkich A. М., Shutov S. V., Sypko N. I.

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This work is licensed under a Creative Commons Attribution 4.0 International License.