GaAs-based heterostructures with InAs quantum dots for photovoltaic converters

  • I. E. Maronchuk Kherson National Technical University, Ukraine
  • Yu. A. Dobrozhanskiy Odesa State Environmental University, Ukraine
Keywords: photovoltaic cells, quantum dots, indium arsenide, gallium arsenide, liquid phase epitaxy

Abstract

The possibility of obtaining efficient third-generation photovoltaic converters (PVCs) has been considered. Heterostructures based on GaAs with InAs quantum dots (QDs), formed during liquid-phase epitaxy by the method of pulsed cooling of a saturated solution in indium or tin melt, have been investigated. The characteristics of PVCs fabricated on heterostructures containing QDs in the region of the p–n junction were inferior to those of control converters produced on similar structures without QDs. Converters containing QDs in the p-region, however, were not inferior to the control devices and even demonstrated slightly better performance.

Published
2008-12-30
How to Cite
Maronchuk, I. E., & Dobrozhanskiy, Y. A. (2008). GaAs-based heterostructures with InAs quantum dots for photovoltaic converters. Technology and Design in Electronic Equipment, (6), 32-34. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.6.32
Issue
No. 6 (2008): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2008 Maronchuk I. E., Dobrozhanskiy Yu. A.

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