Features of photoelectric characteristics of photoelectric converter structures

  • A. V. Karimov Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • D. M. Yodgorova Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • F. A. Giyasova Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • T. M. Azimov Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • U. M. Buzrukov Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • A. A. Yakubov Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
Keywords: isotype, photoelectric converter, heterostructure, barrier, photoelectric gain

Abstract

The peculiarities of photoelectric characteristics of converter structures based on the isotype n-GaAs/n-GaInAs heterojunction with Ag potential barriers have been investigated. The physical processes occurring in the potential barriers under optical irradiation are analyzed. The structures exhibit enhanced photosensitivity (2.2 A/W) at low light intensities. The photocurrent in the impurity absorption region covers a wide spectral range, extending up to 1.7 μm.

Published
2007-08-30
How to Cite
Karimov, A. V., Yodgorova, D. M., Giyasova, F. A., Azimov, T. M., Buzrukov, U. M., & Yakubov, A. A. (2007). Features of photoelectric characteristics of photoelectric converter structures. Technology and Design in Electronic Equipment, (4), 23-28. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.4.23