Combined method of growing epitaxial layers of A³B⁵ semiconductor compounds

  • D. M. Yodgorova Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • A. V. Karimov Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • F. A. Giyasova Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • R. A. Saidova Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
Keywords: device, method, structure, regime, epitaxy, heterolayer

Abstract

A combined method for obtaining epitaxial layers of A3B5 semiconductor compounds is described, carried out in a single technological process by both forced cooling and isothermal mixing of solution-melts. In this process, the parameters of the grown layers are determined by the cooling regime and the rate of supply of the mixed solutions. The proposed method and device are of interest for producing semiconductor structures with a variable bandgap width in the active regions.

Published
2007-06-29
How to Cite
Yodgorova, D. M., Karimov, A. V., Giyasova, F. A., & Saidova, R. A. (2007). Combined method of growing epitaxial layers of A³B⁵ semiconductor compounds. Technology and Design in Electronic Equipment, (3), 56-58. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.3.56
Issue
No. 3 (2007): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2007 Yodgorova D. M., Karimov A. V., Giyasova F. A., Saidova R. A.

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