Formation of transparent ohmic contacts to p-GaN for light-emitting diodes

Abstract

Results of studies on ohmic contacts based on Ni/Au films to the p-type GaN region are presented. The influence of Ni/Au layer thickness, deposition conditions, and contact formation regimes on specific contact resistance, element redistribution in metal–semiconductor structures, and optical properties of the contact system has been investigated. Ohmic contacts (Ni/Au)/p-GaN with a specific contact resistance of (1–2)·10⁻³ Ω·cm² and transparency of 78% at a wavelength of 460 nm have been obtained.