GaAs Gunn diodes with a cathode contact injecting hot electrons

  • V. N. Ivanov Research Institute «Orion», Kyiv, Ukraine
  • V. M. Kovtonjuk Research Institute «Orion», Kyiv, Ukraine
  • Ju. E. Nikolaenko Research Institute «Orion», Kyiv, Ukraine
Keywords: gallium arsenide, Gunn diode, hot electron injection

Abstract

Gunn diodes made of GaAs with a cathode contact AuGe–TiB2–Au that injects hot electrons have been developed. The Gunn diodes operate in the frequency range from 17.44 to 78.0 GHz with efficiencies from 8% to 4%, respectively. Based on the Gunn diode, a generator with electronic frequency tuning in the range of 32.7–34.7 GHz has been designed, featuring an output power variation of less than 1.5 dB across the tuning band and under temperature changes from –50 °C to +75 °C.

Published
2007-04-30
How to Cite
Ivanov, V. N., Kovtonjuk, V. M., & Nikolaenko, J. E. (2007). GaAs Gunn diodes with a cathode contact injecting hot electrons. Technology and Design in Electronic Equipment, (2), 29-30. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.2.29
Issue
No. 2 (2007): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2007 Ivanov V. N., Kovtonjuk V. M., Nikolaenko Ju. E.

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