Mechanism of controlling the photosensitivity of a field phototransisto

Abstract

It has been experimentally shown that in a field phototransistor with a channel doped with tin, the region of high dynamic resistance is extended, in contrast to a transistor doped with tellurium. This difference is related to the specific mechanisms of channel cutoff in each case. The mechanisms of photosensitivity have been clarified, and a direct dependence of internal photocurrent amplification on the steepness of the transfer characteristic and the output dynamic resistance has been established. The results can be applied in the design of optoelectronic circuits based on field phototransistors